Quantum dot device tunable from single to triple dot system

被引：1
|
作者：
Rogge, M. C. [1 ]
Pierz, K. [2 ]
Haug, R. J. [1 ]
机构：
[1] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany
[2] Phys Tech Bundesanstalt, 38116 Braunschweig, Germany
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
Quantum dots; Coulomb blockade; single-electron tunneling;
D O I：
10.1063/1.4848366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.
引用
收藏
页码：223 / +
页数：2
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