Quantum dot device tunable from single to triple dot system

被引：1

作者：

Rogge, M. C. ^{[1
]}

Pierz, K. ^{[2
]}

Haug, R. J. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany

[2] Phys Tech Bundesanstalt, 38116 Braunschweig, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Quantum dots; Coulomb blockade; single-electron tunneling;

D O I：

10.1063/1.4848366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.

引用

页码：223 / +

页数：2

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