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Nanopillar Spin Filter Tunnel Junctions with Manganite Barriers
被引:20
|作者:
Prasad, Bhagwati
[1
]
Egilmez, Mehmet
[1
]
Schoofs, Frank
[1
]
Fix, Thomas
[1
]
Vickers, Mary E.
[1
]
Zhang, Wenrui
[2
]
Jian, Jie
[2
]
Wang, Haiyan
[2
]
Blamire, Mark G.
[1
]
机构:
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
基金:
美国国家科学基金会;
关键词:
Spin filter;
nanopillar;
tunnel barrier;
manganites;
Kondo effect;
LARGE MAGNETORESISTANCE;
MAGNETIC-FIELD;
ZERO;
POLARIZATION;
ANOMALIES;
TRANSPORT;
DEVICES;
PHYSICS;
PHASE;
TEMPERATURE;
D O I:
10.1021/nl500798b
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The potential of a manganite ferromagnetic insulator in the field of spin-filtering has been demonstrated. For this, an ultrathin film of Sm0.75Sr0.25MnO3 is integrated as a barrier in an epitaxial oxide nanopillar tunnel junction and a high spin polarization of up to 75% at 5 K has been achieved. A large zero-bias anomaly observed in the dynamic conductance at low temperatures is explained in terms of the Kondo scattering model. In addition, a decrease in spin polarization at low bias and hysteretic magneto-resistance at low temperatures are reported. The results open up new possibilities for spin-electronics and suggest exploration of other manganites-based materials for the room temperature spin-filter applications.
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页码:2789 / 2793
页数:5
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