Spin filter based tunnel junctions

被引：0
|
作者：
Chapline, Michael G. [1 ]
Wang, Shan X. [1 ,2 ]
机构：
[1] Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
[2] Department of Electrical Engineering, Stanford University, Stanford, CA 94305
来源：
Journal of Applied Physics | 2006年 / 100卷 / 12期
关键词：
A theoretical estimate is given for the magnetoresistance ratio in ferromagnetic metal /nonmagnetic insulator/magnetic insulator/metallic junctions. Such a device has the potential to exhibit a room temperature magnetoresistive effect much larger than conventional magnetic tunnel devices. A half metallic electrode is desired but not required for achieving a sizable magnetoresistance in such devices. Some possible materials that could be used to fabricate such a device include ferrite based spin filters and CoFeMgO based electrodes. Such devices are predicted to give a magnetoresistance ratio >1000%. © 2006 American Institute of Physics;
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