Nanopillar Spin Filter Tunnel Junctions with Manganite Barriers

被引：20

作者：

Prasad, Bhagwati ^{[1
]}

Egilmez, Mehmet ^{[1
]}

Schoofs, Frank ^{[1
]}

Fix, Thomas ^{[1
]}

Vickers, Mary E. ^{[1
]}

Zhang, Wenrui ^{[2
]}

Jian, Jie ^{[2
]}

Wang, Haiyan ^{[2
]}

Blamire, Mark G. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

来源：

NANO LETTERS | 2014年 / 14卷 / 05期

基金：

美国国家科学基金会;

关键词：

Spin filter; nanopillar; tunnel barrier; manganites; Kondo effect; LARGE MAGNETORESISTANCE; MAGNETIC-FIELD; ZERO; POLARIZATION; ANOMALIES; TRANSPORT; DEVICES; PHYSICS; PHASE; TEMPERATURE;

D O I：

10.1021/nl500798b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The potential of a manganite ferromagnetic insulator in the field of spin-filtering has been demonstrated. For this, an ultrathin film of Sm0.75Sr0.25MnO3 is integrated as a barrier in an epitaxial oxide nanopillar tunnel junction and a high spin polarization of up to 75% at 5 K has been achieved. A large zero-bias anomaly observed in the dynamic conductance at low temperatures is explained in terms of the Kondo scattering model. In addition, a decrease in spin polarization at low bias and hysteretic magneto-resistance at low temperatures are reported. The results open up new possibilities for spin-electronics and suggest exploration of other manganites-based materials for the room temperature spin-filter applications.

引用

页码：2789 / 2793

页数：5

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