Dual-Gate InGaZnO Thin-Film Transistors with Organic Polymer as a Dielectric Layer

被引：16

作者：

Choi, Ji-Hyuk ^{[1
]}

Seo, Hyun-Sik ^{[1
,2
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] LG Display LCD Res & Dev Ctr, Paju Si 413811, Gyeonggi Do, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期

关键词：

amorphous semiconductors; dielectric thin films; gallium compounds; III-VI semiconductors; indium compounds; polymers; thin film transistors; wide band gap semiconductors; zinc compounds; FABRICATION;

D O I：

10.1149/1.3077176

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive V-th shift under positive bias stress, the highly stable V-th shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

引用

页码：H145 / H148

页数：4

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