Dual-Gate InGaZnO Thin-Film Transistors with Organic Polymer as a Dielectric Layer

被引：16
|
作者：
Choi, Ji-Hyuk [1 ]
Seo, Hyun-Sik [1 ,2 ]
Myoung, Jae-Min [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea
[2] LG Display LCD Res & Dev Ctr, Paju Si 413811, Gyeonggi Do, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期
关键词：
amorphous semiconductors; dielectric thin films; gallium compounds; III-VI semiconductors; indium compounds; polymers; thin film transistors; wide band gap semiconductors; zinc compounds; FABRICATION;
D O I：
10.1149/1.3077176
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive V-th shift under positive bias stress, the highly stable V-th shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.
引用
收藏
页码：H145 / H148
页数：4
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