Static and Dynamic Performance Characterization and Comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs

被引：0

作者：

Wang, Gangyao ^{[1
,2
]}

Huang, Alex Q. ^{[1
]}

Wang, Fei ^{[1
]}

Song, Xiaoqing ^{[1
]}

Ni, Xijun ^{[1
]}

Ryu, Sei-Hyung ^{[2
]}

Grider, David ^{[2
]}

Schupbach, Marcelo ^{[2
]}

Palmour, John ^{[2
]}

机构：

[1] N Carolina State Univ, NSF FREEDM Syst Ctr, Raleigh, NC 27695 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents the static and dynamic performance of 15 kV SiC IGBTs with 2 um and 5 um field-stop buffer layer thicknesses respectively and compares them with 15 kV SiC MOSFET in term of loss and switching capability. Their switching energy for different gate resistors and temperature have been reported and compared. A 5 kHz 10.5 kW 8 kV boost converter has been built and tested using these three devices respectively. The MOSFET based boost converter has the highest efficiency 99.39% which is the highest reported efficiency for a high voltage SiC device based converter. PLECS loss models can be developed for these devices based on the characterization data to simplify the simulation of a variety circuits or applications which potentially utilize these devices.

引用

页码：229 / 232

页数：4

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