Static and Dynamic Performance Characterization and Comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs

被引：0

作者：

Wang, Gangyao ^{[1
,2
]}

Huang, Alex Q. ^{[1
]}

Wang, Fei ^{[1
]}

Song, Xiaoqing ^{[1
]}

Ni, Xijun ^{[1
]}

Ryu, Sei-Hyung ^{[2
]}

Grider, David ^{[2
]}

Schupbach, Marcelo ^{[2
]}

Palmour, John ^{[2
]}

机构：

[1] N Carolina State Univ, NSF FREEDM Syst Ctr, Raleigh, NC 27695 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents the static and dynamic performance of 15 kV SiC IGBTs with 2 um and 5 um field-stop buffer layer thicknesses respectively and compares them with 15 kV SiC MOSFET in term of loss and switching capability. Their switching energy for different gate resistors and temperature have been reported and compared. A 5 kHz 10.5 kW 8 kV boost converter has been built and tested using these three devices respectively. The MOSFET based boost converter has the highest efficiency 99.39% which is the highest reported efficiency for a high voltage SiC device based converter. PLECS loss models can be developed for these devices based on the characterization data to simplify the simulation of a variety circuits or applications which potentially utilize these devices.

引用

页码：229 / 232

页数：4

共 50 条

[31] Fabrication and characterization of 5 kV IGBTs on 4H-SiC
Jonas, Charlotte
Zhang, Qingchun
Ryu, Sei-Hyung
Agarwal, Anant
Palmour, John
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 437 - +
[32] 15kV Press Pack SiC IGBT
Du Yujie
Tang Xinling
Wang Liang
Zhao Zhibin
Yang Xiaolei
Yang, Fei
Wu Junmin
2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 162 - 166
[33] A superior 15 kV SiC MOSFET with current spreading layer for high-frequency applications
Kitai, Hidenori
Yamaguchi, Tsutomu
Hozumi, Yasuo
Shiomi, Hiromu
Fukuda, Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SB)
[34] Soft Switching Characterization of 15 kV SiC n-IGBT and Performance Evaluation for High Power Converter Applications
Vechalapu, Kasunaidu
Tripathi, Awneesh
Mainali, Krishna
Baliga, B. Jayant
Bhattacharya, Subhashish
2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2015, : 4151 - 4158
[35] Medium Voltage Solid State Transformers Based on 15 kV SiC MOSFET and JBS Diode
Huang, Alex Q.
Wang, Li
Tian, Qi
Zhu, Qianlai
Chen, Dong
Yu, Wensong
PROCEEDINGS OF THE IECON 2016 - 42ND ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2016, : 6996 - 7003
[36] Characterization, modeling, and application of 10-kV SiC MOSFET
Wang, Jun
Zhao, Tiefu
Li, Jun
Huang, Alex Q.
Callanan, Robert
Husna, Fatima
Agarwal, Anant
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1798 - 1806
[37] Characterization of High-Voltage-SiC-Devices with 15 kV Blocking Voltage
Thoma, Juergen
Kolb, Sven
Salzmann, Christopher
Kranzer, Dirk
2016 IEEE INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (PEMC), 2016, : 946 - 951
[38] Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions
Kim, Matthew
Forbes, J. J.
Hirsch, Emily A.
Schrock, James
Lacouture, Shelby
Bilbao, Argenis
Bayne, Stephen B.
O'Brien, Heather K.
Ogunniyi, Aderinto A.
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2020, 48 (11) : 3962 - 3967
[39] Characterization of 15 kV SiC n-IGBT and its Application Considerations for High Power Converters
Kadavelugu, Arun
Bhattacharya, Subhashish
Ryu, Sei-Hyung
Van Brunt, Edward
Grider, David
Agarwal, Anant
Leslie, Scott
2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2013, : 2528 - 2535
[40] Optimization of ON-state and switching performances for 15-20-kV 4H-SiC IGBTs
Tamaki, Tomohiro
Walden, Ginger G.
Sui, Yang
Cooper, James A.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1920 - 1927

← 1 2 3 4 5 →