RF Devices Integrated by Fan-Out and System-In-Package Technology

被引：1

作者：

Kung, Cheng-Yuan ^{[1
]}

Lin, Hung-Yi ^{[1
]}

Kuo, Chin-Cheng ^{[1
]}

Wu, Cheng-Syuan ^{[1
]}

Chen, Yu-Ting ^{[1
]}

Hsieh, Meng-Wei ^{[1
]}

Hsieh, Yu-Chang ^{[1
]}

Lee, Pao-Nan ^{[1
]}

机构：

[1] Adv Semicond Engn ASE Inc, NEPZ, 26,Chin 3rd Rd, Kaohsiung 811, Taiwan

来源：

2022 17TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT) | 2022年

关键词：

D O I：

10.1109/IMPACT56280.2022.9966715

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Higher performance and smaller form factor are always the critical subjects for mobile device in recent years. To meet this demand, System-In-Package (SiP) has become a certain path for innovation and an unstoppable trend for decade. In this study, the benefits of evolving SiP with organic substrate to Fan-Out SiP (FOSiP) for new generation mobile RF module with higher performance and smaller form factor has been illustrated. A designed and manufactured FOSiP module with 6 RF devices integrated by several core features and building blocks would be demonstrated, including chip-last RDL manufacturing, carrier system, wafer level assembly and shielding sputtering.

引用

页数：4

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