Photon-number resolving performance of the InGaAs/InP avalanche photodiode with short gates

被引：15
|
作者：
Chen, Xiuliang [1 ]
Wu, E. [1 ]
Xu, Lilin [1 ]
Liang, Yan [1 ]
Wu, Guang [1 ]
Zeng, Heping [1 ]
机构：
[1] E China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 13期
关键词：
DETECTOR;
D O I：
10.1063/1.3242380
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using a self-differencing circuit to achieve efficient spike cancellation for the near-infrared single-photon detector based on InGaAs/InP avalanche photodiode, we verified that shortening the gate duration enforced the detection efficiency to saturate at an increased voltage, while increasing the avalanche gain favored the discrimination of the avalanche signals caused by different photon-number states. Photon-number resolving detection was realized by measuring the weak current at the avalanche built-up. The photon-number resolving performance could be improved by shortening the gating pulse duration. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242380]
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页数：3
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