Gain characteristics of InP/InGaAs heterostructure avalanche photodiode

被引：3
|
作者：
Hyun, KS [1 ]
Park, CY [1 ]
Lee, EH [1 ]
机构：
[1] Elect & Telecommun Res Inst, Taejon 305600, South Korea
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 51卷 / 1-3期
关键词：
avalanche photodiode; avalanche gain; multiplication layer width; charge plate;
D O I：
10.1016/S0921-5107(97)00239-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural parameters of an avalanche photodiode, having a p-i-n structure of a multiplication region, have been analyzed by solving the electric field equations and avalanche gain factors. The multiplication layer width dependence of the breakdown voltage as well as the temperature dependent behavior of the breakdown voltage are explained consistently for devices. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：106 / 109
页数：4
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