X-valley leakage in GaAs/AlGaAs quantum cascade lasers

被引：33
|
作者：
Gao, X. [1 ]
Botez, D. [1 ]
Knezevic, I. [1 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期
关键词：
D O I：
10.1063/1.2387485
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors present a Monte Carlo simulation of GaAs/Al0.33Ga0.67As and GaAs/Al0.45Ga0.55As quantum cascade lasers (QCLs) that incorporates both Gamma- and X-valley transport. The dominant X-valley leakage path in both lasers is interstage X -> X scattering. The leakage current is much higher in the 33%-Al QCL, as strong coupling of its weakly localized Gamma-valley states to the next-stage continuum Gamma states (Gamma(c)), followed by strong same-stage Gamma(c)-> X scattering, ensures high X-valley population and subsequent high X -> X leakage current at 300 K, even at low fields. Very good agreement with experiment is obtained at both cryogenic and room temperatures. (c) 2006 American Institute of Physics.
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页数：3
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