Facet temperature mapping of GaAs/AlGaAs quantum cascade lasers by photoluminescence microprobe

被引：3
|
作者：
Spagnolo, V [1 ]
Troccoli, M
Scamarcio, G
Becker, C
Glastre, G
Sirtori, C
机构：
[1] Univ Bari, Dept Phys, INFM, I-70126 Bari, Italy
[2] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
来源：
OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期
关键词：
quantum cascade laser; facet temperature mapping; thermal resistance;
D O I：
10.1016/S0925-3467(01)00083-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The measurement of thermal resistance and facet temperature profile of operating GaAs/AlGaAs quantum cascade lasers (QCLs) as a function of injected current, repetition rate and pulse width is reported. The use of microprobe band-to-band photoluminescence (PL) spectroscopy allows to achieve a spatial resolution <1 mum. Substrate-side and epilayer-side mounted devices with identical laser structures were investigated. At T = 80 K, the thermal resistance of epilayer-side mounted devices (7.8 K/W) is similar to 30% lower than that of substrate-side mounted devices, thus explaining the better performance of the former. The outcome of a two-dimensional model of heat propagation in our structures is compared with the experimental data. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：219 / 222
页数：4
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