Photo-irresponsive thin-film transistor with MgxZn1-xO channel

被引:25
|
作者
Ohtomo, Akira [1 ]
Takagi, Shingo
Tamura, Kentaro
Makino, Takayuki
Segawa, Yusaburo
Koinuma, Hideomi
Kawasaki, Masashi
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[3] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan
[4] COMET, Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 24-28期
关键词
ZnO; MgxZn1-xO; thin-film transistor; photoresponse; field-effect mobility;
D O I
10.1143/JJAP.45.L694
中图分类号
O59 [应用物理学];
学科分类号
摘要
If field-effect devices based on wide-band-gap semiconductors are ever to find wide application in real transparent electronics, their performance is required remain stable under visible light. In particular, a thin-film transistor (TFT) irresponsive to visible illumination has a practical advantage, if used for the switching of pixels in a liquid crystal display (LCD), because shadeless pixels make it possible to lower cost and power consumption. In this letter, we report such a TFT with a channel made of low-temperature-grown MgxZn1-xO film. This device with a polycrystalline Mg0.1Zn0.9O channel operated under illumination shows the same transfer characteristics as those in the dark when the wavelength is longer than 400nm. The field-effect mobility was measured to be 0.8cm(2).V-1.s(-1), comparable to that of amorphous Si-based TFTs used in commercial LCDs.
引用
收藏
页码:L694 / L696
页数:3
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