Device modeling and optimization of high-performance thin film with MgxZn1-xO buffer layer

被引：0

作者：

Pandey, Saurabh Kumar ^{[1
]}

Mukherjee, Shaibal ^{[1
]}

机构：

[1] Indian Inst Technol, Hybrid Nanodevice Res Grp, Discipline Elect Engn, Indore 453441, Madhya Pradesh, India

来源：

PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2013年

关键词：

CIGS; conversion efficiency; deep defect; modeling; Photovoltaic (PV) cell;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters of 1.2V for open circuit voltage (V-oc), 34.8 mA/cm(2) of short circuit current density (J(sc)) and a fill factor of 85.7%. Different aspects of constituent layer parameters thickness, doping, and alloy composition calibrations has been considered to identify the optimization criteria for the design of CIGS based solar cell.

引用

页码：353 / 356

页数：4