Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si

被引：0

作者：

Bietti, S. ^{[1
,2
]}

Cecchi, S. ^{[3
,4
]}

Frigeri, C. ^{[5
]}

Grilli, E. ^{[1
,2
]}

Fedorov, A. ^{[6
]}

Vinattieri, A. ^{[7
,8
]}

Gurioli, M. ^{[7
,8
]}

Isella, G. ^{[3
,4
]}

Sanguinetti, S. ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, L NESS, Via Cozzi 53, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Politecn Milan, L NESS, I-22100 Como, Italy

[4] Politecn Milan, Dipartimento Fis, I-22100 Como, Italy

[5] CNR, IMEM Inst, I-43100 Parma, Italy

[6] IFN CNR, L NESS, I-22100 Como, Italy

[7] Univ Florence, CNISM, I-50019 Florence, Italy

[8] Univ Florence, Dipartimento Fis & Astron, LENS, I-50019 Florence, Italy

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

THREADING-DISLOCATION DENSITIES; CHEMICAL-VAPOR-DEPOSITION; GAAS/ALGAAS QUANTUM DOTS; MODIFIED DROPLET EPITAXY; LOW-TEMPERATURE; GROWTH; PHOTOLUMINESCENCE; HETEROSTRUCTURES; SI(001); FILMS;

D O I：

10.1149/05009.0783ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ge-on-Si substrates, made by a thin Ge relaxed layer with a low threading dislocation density and reduced surface roughness deposited on Si, are capable of accommodating the mismatch between GaAs and Si substrate and can be used for the growth of high quality AlGaAs/GaAs layers and of GaAs nanostructures by droplet epitaxy, while maintaining a low thermal budget compatible with the integration of CMOS devices.

引用

页码：783 / 789

页数：7

共 50 条

[21] Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD
Yong Du
Buqing Xu
Guilei Wang
Shihai Gu
Ben Li
Zhenzhen Kong
Jiahan Yu
Guobin Bai
Junjie Li
Wenwu Wang
Henry H. Radamson
Journal of Materials Science: Materials in Electronics, 2021, 32 : 6425 - 6437
[22] Large-area high-quality graphene on Ge(001)/Si(001) substrates
Pasternak, I.
Dabrowski, P.
Ciepielewski, P.
Kolkovsky, V.
Klusek, Z.
Baranowski, J. M.
Strupinski, W.
NANOSCALE, 2016, 8 (21) : 11241 - 11247
[23] High performance Ge-on-Si Avalanche Photodetector
Jang, Ki-Seok
Kim, Sanghoon
Kim, In Gyoo
Oh, Jin Hyuk
Kim, Sun Ae
Joo, Jiho
Kim, Gyungock
OPTICAL INTERCONNECTS XVI, 2016, 9753
[24] High-performance Ge-on-Si photodetectors
Jurgen Michel
Jifeng Liu
Lionel C. Kimerling
Nature Photonics, 2010, 4 : 527 - 534
[25] Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
Yang, Changjae
Lee, Sangsoo
Shin, Keun Wook
Oh, Sewoung
Park, Jinsub
Kim, Chang-Zoo
Park, Won-Kyu
Ha, Seung-Kyu
Choi, Won Jun
Yoon, Euijoon
APPLIED PHYSICS LETTERS, 2011, 99 (09)
[26] Fabrication and integration of nanostructures on Si surfaces
Ogino, T
Hibino, H
Homma, Y
Kobayashi, Y
Prabhakaran, K
Sumitomo, K
Omi, H
ACCOUNTS OF CHEMICAL RESEARCH, 1999, 32 (05) : 447 - 454
[27] High-performance Ge-on-Si photodetectors
Michel, Jurgen
Liu, Jifeng
Kimerling, Lionel C.
NATURE PHOTONICS, 2010, 4 (08) : 527 - 534
[28] Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
Yang, Changjae
Lee, Sangsoo
Shin, Keun-Wook
Oh, Sewoung
Moon, Daeyoung
Kim, Sung-Dae
Kim, Young-Woon
Kim, Chang-Zoo
Park, Won-kyu
Choi, Won Jun
Park, Jinsub
Yoon, Euijoon
JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 168 - 172
[29] Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Yoo, Ook Sang
Oh, Jungwoo
Min, Kyung Seok
Kang, Chang Yong
Lee, B. H.
Lee, Kyong Taek
Na, Min Ki
Kwon, Hyuk-Min
Majhi, P.
Tseng, H-H
Jammy, Raj
Wang, J. S.
Lee, Hi-Deok
MICROELECTRONIC ENGINEERING, 2009, 86 (03) : 259 - 262
[30] Ge-on-Si Integrated Photonics
Liu, Jifeng
2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,

← 1 2 3 4 5 →