Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

被引：5
|
作者：
Yoo, Ook Sang [1 ,2 ]
Oh, Jungwoo [3 ]
Min, Kyung Seok [2 ]
Kang, Chang Yong [3 ]
Lee, B. H. [3 ]
Lee, Kyong Taek [2 ,4 ]
Na, Min Ki [1 ]
Kwon, Hyuk-Min [1 ]
Majhi, P. [3 ]
Tseng, H-H [3 ]
Jammy, Raj [3 ]
Wang, J. S. [1 ]
Lee, Hi-Deok [1 ,2 ]
机构：
[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea
[2] Univ Texas Austin, Austin, TX 78712 USA
[3] SEMATECH, Austin, TX 78741 USA
[4] Pohang Univ Sci & Technol, POSTECH, Pohang, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 03期
关键词：
Ge pMOSFET; NBTI; Interface trap; High mobility channel; Charge pumping; HFO2; THIN-FILMS; SUBSTRATE;
D O I：
10.1016/j.mee.2008.04.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance (G(m)) and enhanced drive current. In addition, lower threshold voltage shift and G(m,max) degradation are observed during NBTI stress. The primary reason for these characteristics is attributed to the improved interface quality at the high-k dielectric/substrate interface. Charge pumping was used to verify the presence of lower density of states in Ge pMOSFETs with a Si cap. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：259 / 262
页数：4
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