Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si

被引：0

作者：

Bietti, S. ^{[1
,2
]}

Cecchi, S. ^{[3
,4
]}

Frigeri, C. ^{[5
]}

Grilli, E. ^{[1
,2
]}

Fedorov, A. ^{[6
]}

Vinattieri, A. ^{[7
,8
]}

Gurioli, M. ^{[7
,8
]}

Isella, G. ^{[3
,4
]}

Sanguinetti, S. ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, L NESS, Via Cozzi 53, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Politecn Milan, L NESS, I-22100 Como, Italy

[4] Politecn Milan, Dipartimento Fis, I-22100 Como, Italy

[5] CNR, IMEM Inst, I-43100 Parma, Italy

[6] IFN CNR, L NESS, I-22100 Como, Italy

[7] Univ Florence, CNISM, I-50019 Florence, Italy

[8] Univ Florence, Dipartimento Fis & Astron, LENS, I-50019 Florence, Italy

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

THREADING-DISLOCATION DENSITIES; CHEMICAL-VAPOR-DEPOSITION; GAAS/ALGAAS QUANTUM DOTS; MODIFIED DROPLET EPITAXY; LOW-TEMPERATURE; GROWTH; PHOTOLUMINESCENCE; HETEROSTRUCTURES; SI(001); FILMS;

D O I：

10.1149/05009.0783ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ge-on-Si substrates, made by a thin Ge relaxed layer with a low threading dislocation density and reduced surface roughness deposited on Si, are capable of accommodating the mismatch between GaAs and Si substrate and can be used for the growth of high quality AlGaAs/GaAs layers and of GaAs nanostructures by droplet epitaxy, while maintaining a low thermal budget compatible with the integration of CMOS devices.

引用

页码：783 / 789

页数：7

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