Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

被引：2

作者：

Feng, Wei ^{[1
,2
]}

Dou, Chun Meng ^{[3
,4
]}

Niwa, Masaaki ^{[1
,2
]}

Yamada, Keisaku ^{[1
,2
]}

Ohmori, Kenji ^{[1
,2
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Tokyo 1020075, Japan

[3] Univ Tsukuba, Honors Grad Program Nanotech Sci, Tsukuba, Ibaraki 3058573, Japan

[4] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

MOSFETs; dynamic gate bias; random telegraph noise;

D O I：

10.1109/LED.2013.2288981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I-d) during the rise/fall edges of the pulsed gate voltage (V-g) cycle was investigated. We have revealed for the first time that the existence of RTN increases I-d fluctuations under dynamic V-g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V-g, which are governed by the RTN profiles, significantly affect the I-d values during the rise/fall edges of V-g. The revealed effects of RTN with different profiles on I-d under dynamic V-g will be useful for designing ultrahigh speed circuits.

引用

页码：3 / 5

页数：3

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