Steep Subthreshold Slope Nanoelectromechanical Field-Effect Transistors with Nanowire Channel and Back Gate Geometry

被引：0
|
作者：
Kim, Ji-Hun [1 ]
Chen, Zack C. Y. [1 ]
Kwon, Soonshin [1 ]
Xiang, Jie [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：209 / 210
页数：2
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