Modeling of the heterostructure field-effect transistor with quantum dots

被引：0

作者：

Timofeyev, V., I ^{[1
]}

Faleyeva, E. M. ^{[1
]}

机构：

[1] Natl Tech Univ Ukraine, KPI, 37 Pobedy Ave, UA-03056 Kiev, Ukraine

来源：

2006 16TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characteristics of the heterostructure transistor with quantum dots (QD) on the grounds of two-dimensional numerical model are presented.

引用

页码：222 / +

页数：2

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