Spin-dependent transport across Co/LaAlO3/SrTiO3 heterojunctions

被引:33
|
作者
Swartz, Adrian G. [1 ]
Harashima, Satoshi [2 ,3 ]
Xie, Yanwu [1 ,2 ]
Lu, Di [4 ]
Kim, Bongju [1 ,2 ]
Bell, Christopher [2 ,5 ]
Hikita, Yasuyuki [2 ]
Hwang, Harold Y. [1 ,2 ]
机构
[1] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[2] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[4] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[5] Univ Bristol, Dept Phys, Bristol BS8 1TL, Avon, England
关键词
INJECTION; SILICON;
D O I
10.1063/1.4891174
中图分类号
O59 [应用物理学];
学科分类号
摘要
The conducting interface formed between LaAlO3 and SrTiO3 exhibits high electron mobility, tunable carrier densities, and is theoretically predicted to have long spin lifetimes. Thus, the LaAlO3/SrTiO3 heterostructure is a promising system for the transportation of spin information. We have investigated spin-dependent transport across Co/LaAlO3/SrTiO3 heterostructures using an all electrical three terminal geometry and observed Lorentzian magnetoresistance typically associated with Hanle spin dephasing. However, such a picture fails to explain all the experimentally observed behavior. Further, experiments with spin-unpolarized Au/LaAlO3/SrTiO3 heterojunctions support an alternative scenario involving current modulation by spin-dependent transport through defect states in the LaAlO3 barrier. (C) 2014 AIP Publishing LLC.
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页数:4
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