Spin-dependent transport across Co/LaAlO3/SrTiO3 heterojunctions

被引：33

作者：

Swartz, Adrian G. ^{[1
]}

Harashima, Satoshi ^{[2
,3
]}

Xie, Yanwu ^{[1
,2
]}

Lu, Di ^{[4
]}

Kim, Bongju ^{[1
,2
]}

Bell, Christopher ^{[2
,5
]}

Hikita, Yasuyuki ^{[2
]}

Hwang, Harold Y. ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[2] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[4] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[5] Univ Bristol, Dept Phys, Bristol BS8 1TL, Avon, England

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 03期

关键词：

INJECTION; SILICON;

D O I：

10.1063/1.4891174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conducting interface formed between LaAlO3 and SrTiO3 exhibits high electron mobility, tunable carrier densities, and is theoretically predicted to have long spin lifetimes. Thus, the LaAlO3/SrTiO3 heterostructure is a promising system for the transportation of spin information. We have investigated spin-dependent transport across Co/LaAlO3/SrTiO3 heterostructures using an all electrical three terminal geometry and observed Lorentzian magnetoresistance typically associated with Hanle spin dephasing. However, such a picture fails to explain all the experimentally observed behavior. Further, experiments with spin-unpolarized Au/LaAlO3/SrTiO3 heterojunctions support an alternative scenario involving current modulation by spin-dependent transport through defect states in the LaAlO3 barrier. (C) 2014 AIP Publishing LLC.

引用

页数：4

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