A comparative study of superconductivity at LaAlO3/SrTiO3 and BaTiO3/LaAlO3/SrTiO3 heterointerfaces

被引：1
|
作者：
Yan, Qiaohong [1 ]
Gao, Haobin [1 ,2 ]
Peng, Wei [2 ,3 ]
Zhu, Xiaohong [1 ]
机构：
[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Lab Superconducting Elect, Shanghai 200050, Peoples R China
[3] CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
来源：
AIP ADVANCES | 2023年 / 13卷 / 06期
关键词：
2-DIMENSIONAL ELECTRON GASES; INTERFACE; CONDUCTIVITY;
D O I：
10.1063/5.0159304
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Lead-free BaTiO3 (BTO) film was fabricated by pulsed laser deposition on LaAlO3/SrTiO3 (LAO/STO) heterostructure in oxygen pressure of 2 x 10(-3) Pa, which is experimentally required for ensuring the two-dimensional electron gas at LAO/STO heterointerface. Modulation of back-gate voltage on the superconductivity of LAO/STO and BTO/LAO/STO heterointerfaces was studied. The results indicate that the back-gate voltage can adjust the resistance at high temperatures around 300 mK, while it does not modulate the superconducting transition temperature of LAO/STO, which occurs at 160 mK. As for BTO/LAO/STO, it still shows a superconducting transition-like behavior at 110 mK. However, when a negative back-gate voltage is applied, the superconducting transition-like behavior disappears, and after removing the voltage, unlike what was observed for LAO/STO, the superconductivity cannot be recovered. Given this, some underlying mechanisms are proposed.
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页数：6
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