Characterization of MgxZn1-xO thin films prepared by sol-gel dip coating

被引：29
|
作者：
Ji, ZG [1 ]
Song, YL [1 ]
Xiang, Y [1 ]
Liu, K [1 ]
Wang, C [1 ]
Ye, ZZ [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 265卷 / 3-4期
关键词：
MgxZn1-xO thin film; photoluminescence; sol-gel; dip coating;
D O I：
10.1016/j.jcrysgro.2004.02.083
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
MgxZn1-xO thin films were prepared on quartz substrates by a sol-gel dip-coating process. Structural and optical properties were investigated using X-ray diffraction, optical absorbance, and photoluminescence (PL). Results showed that the MgxZn1-xO thin films retained the ZnO hexagonal crystal structure with very little lattice deformation compared to the pure ZnO films. The optical band-gap of the MgxZn1-xO thin films varied from 3.28 to 3.73 eV as the Mg content x was increased from 0.0 to 0.3, and it can be formulated using the equation E-g = 3.28 + 1.53x. Results also showed good PL characteristics of these films with strong band-edge UV emission. Like the absorption, the emission energy also shifted towards higher photon energy as the Mg content x in the film was increased. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：537 / 540
页数：4
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