Characterization of MgxZn1-xO thin films prepared by sol-gel dip coating
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作者:
Ji, ZG
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Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
Ji, ZG
[1
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Song, YL
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Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
Song, YL
[1
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Xiang, Y
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Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
Xiang, Y
[1
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Liu, K
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Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
Liu, K
[1
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Wang, C
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Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
Wang, C
[1
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Ye, ZZ
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Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
Ye, ZZ
[1
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机构:
[1] Zhejiang Univ, State Key Lab Silicon Mat, Semicond Mat & Devices, CMSCE, Hangzhou 310027, Peoples R China
MgxZn1-xO thin films were prepared on quartz substrates by a sol-gel dip-coating process. Structural and optical properties were investigated using X-ray diffraction, optical absorbance, and photoluminescence (PL). Results showed that the MgxZn1-xO thin films retained the ZnO hexagonal crystal structure with very little lattice deformation compared to the pure ZnO films. The optical band-gap of the MgxZn1-xO thin films varied from 3.28 to 3.73 eV as the Mg content x was increased from 0.0 to 0.3, and it can be formulated using the equation E-g = 3.28 + 1.53x. Results also showed good PL characteristics of these films with strong band-edge UV emission. Like the absorption, the emission energy also shifted towards higher photon energy as the Mg content x in the film was increased. (C) 2004 Elsevier B.V. All rights reserved.