Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

被引：3

作者：

Sasaki, Takuo ^{[1
]}

Norman, Andrew G. ^{[2
]}

Romero, Manuel J. ^{[2
]}

Al-Jassim, Mowafak M. ^{[2
]}

Takahasi, Masamitu ^{[1
]}

Kojima, Nobuaki ^{[3
]}

Ohshita, Yoshio ^{[3
]}

Yamaguchi, Masafumi ^{[3
]}

机构：

[1] Japan Atom Energy Agcy, 1-1-1 Koto, Sayo, Hyogo 6795148, Japan

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期

关键词：

III-V compound semiconductors; lattice defects; molecular beam epitaxy; solar cells; BUFFER LAYERS; HETEROSTRUCTURES; EPITAXY; STRESS;

D O I：

10.1002/pssc.201300284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defect characterization in molecular beam epitaxial (MBE) compositionally-graded InxGa1-xAs layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in-plane distribution based on strain relaxation at the top and OS layers. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1640 / 1643

页数：4

共 50 条

[41] Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)
Wolkenberg, A
Przeslawski, T
Kaniewski, J
Bak-Misiuk, J
Reginski, K
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 77 (03): : 250 - 254
[42] OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE
KOSCHEL, WH
SMITH, RS
HIESINGER, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1336 - 1339
[43] A new AIGaAs/GaAs/InGaAs lasing switch grown by MBE
Lee, Ming Rong
Yarn, K.F.
Chang, W.R.
Active and Passive Electronic Components, 2001, 24 (04) : 231 - 236
[44] Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs(001) layers
Herrera, M
González, D
González, MU
González, Y
González, L
García, R
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2004, 6 (03): : 805 - 810
[45] Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates
Takano, Yasushi
Kobayashi, Kazunobu
Uranishi, Taiju
Fuke, Shunro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1055021 - 1055025
[46] Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
RussellHarriott, JJ
Zou, J
Cockayne, DJH
Moon, AR
Usher, BF
1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 138 - 141
[47] Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates
Pan, W. W.
Gu, R. J.
Zhang, Z. K.
Lei, W.
Umana-Membreno, G. A.
Smith, D. J.
Antoszewski, J.
Faraone, L.
JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (09) : 4869 - 4883
[48] Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates
W. W. Pan
R. J. Gu
Z. K. Zhang
W. Lei
G. A. Umana-Membreno
D. J. Smith
J. Antoszewski
L. Faraone
Journal of Electronic Materials, 2022, 51 : 4869 - 4883
[49] Defect formation in ZnTe and (Cd,Zn)Te epitaxial layers grown on (001) GaAs
Loginov, YY
Brown, PD
Humphreys, CJ
INORGANIC MATERIALS, 1996, 32 (01) : 22 - 25
[50] Metastable cubic InN layers on GaAs (001) substrates grown by MBE: Growth condition and crystal structure
Sanorpim, Sakuntam
Jantawongrit, Papaporn
Kuntharin, Sman
Thanachayanont, Chanchana
Nakamura, Teruyuki
Katayama, Ryuji
Onabe, Kentaro
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S376 - S380

← 1 2 3 4 5 →