New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr

被引：4
|
作者：
Shon, Yoon [1 ]
Lee, J. W. [1 ]
Lee, D. J. [1 ,2 ]
Yoon, I. T. [1 ]
Kwon, Y. H. [1 ]
Kim, H. S. [2 ]
Kang, T. W. [1 ]
Kyhm, J. H. [3 ]
Song, J. D. [3 ]
Koo, H. C. [4 ,5 ]
Fu, D. J. [6 ]
Park, C. S. [7 ]
An, H. H. [8 ]
Yoon, Chong S. [8 ]
Kim, E. K. [9 ,10 ]
机构：
[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Dongguk Univ Seoul, Dept Phys, Seoul 100715, South Korea
[3] Korea Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea
[4] Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea
[5] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
[6] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[7] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea
[8] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
[9] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[10] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
JOURNAL OF LUMINESCENCE | 2014年 / 154卷
基金：
新加坡国家研究基金会;
关键词：
Photoluminescence; Cr-implantation; P-type InCrP:Zn; SEMICONDUCTORS; INP; GAAS; MN;
D O I：
10.1016/j.jlumin.2014.06.011
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：593 / 596
页数：4
相关论文
共 50 条
  • [41] Structural, electronic and optical properties of Zn0.5Cr0.5S from first-principles
    Yin, Zhu-Hua
    Zhang, Jian-Min
    Xu, Ke-Wei
    COMPUTATIONAL MATERIALS SCIENCE, 2016, 112 : 39 - 43
  • [42] Structural and Optical properties of Cr doped ZnS nanorods
    Bodke, M. R.
    Purushotham, Y.
    Dole, B. N.
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2015, 16 (05): : 601 - 604
  • [43] Magnetic and structural properties of Co, Cr, V ion-implanted GaN
    Lee, JS
    Lim, JD
    Khim, ZG
    Park, YD
    Pearton, SJ
    Chu, SNG
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) : 4512 - 4516
  • [44] Effects of annealing on optical properties of Zn-implanted ZnO thin films
    Xue, S. W.
    Zu, X. T.
    Shao, L. X.
    Yuan, Z. L.
    Zheng, W. G.
    Jiang, X. D.
    Deng, H.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 458 (1-2) : 569 - 573
  • [45] Electrical and structural properties of Cr ion-implanted thin Au films
    Artunç, N
    Elgün, N
    Vizir, A
    Brown, I
    Bo, S
    Tarhan, E
    MATERIALS CHEMISTRY AND PHYSICS, 1999, 60 (02) : 182 - 187
  • [46] Magnetic and structural properties of Co, Cr, V ion-implanted GaN
    Lee, J.S. (parkyd@phya.snu.ac.kr), 1600, American Institute of Physics Inc. (93):
  • [47] Structural, Optical and Electrical Properties of Nitrogen Ion Implanted ZnO Nanorods
    Kwak, C. -H.
    Lee, Y. -B.
    Seo, S. -Y.
    Kim, S. -H.
    Park, C. -I.
    Kim, B. -H.
    Jin, Zhenlan
    Han, S. -W.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (08) : 7420 - 7423
  • [48] Structural, optical, and magnetic properties of Cu-implanted GaN films
    Yang, X. L.
    Chen, Z. T.
    Wang, C. D.
    Zhang, Y.
    Pei, X. D.
    Yang, Z. J.
    Zhang, G. Y.
    Ding, Z. B.
    Wang, K.
    Yao, S. D.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)
  • [49] Structural, optical and electrical properties of argon implanted TiN thin films
    Popovic, M.
    Novakovic, M.
    Mitric, M.
    Zhang, K.
    Bibic, N.
    INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 2015, 48 : 318 - 323
  • [50] Structural, electrical and optical properties of MeV As+ ion implanted InP
    Carmody, C
    Tan, HH
    Jagadish, C
    Zou, J
    Dao, L
    Gal, M
    COMMAD 2002 PROCEEDINGS, 2002, : 487 - 490
12345