New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr

被引：4
|
作者：
Shon, Yoon [1 ]
Lee, J. W. [1 ]
Lee, D. J. [1 ,2 ]
Yoon, I. T. [1 ]
Kwon, Y. H. [1 ]
Kim, H. S. [2 ]
Kang, T. W. [1 ]
Kyhm, J. H. [3 ]
Song, J. D. [3 ]
Koo, H. C. [4 ,5 ]
Fu, D. J. [6 ]
Park, C. S. [7 ]
An, H. H. [8 ]
Yoon, Chong S. [8 ]
Kim, E. K. [9 ,10 ]
机构：
[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Dongguk Univ Seoul, Dept Phys, Seoul 100715, South Korea
[3] Korea Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea
[4] Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea
[5] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea
[6] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[7] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea
[8] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
[9] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[10] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
JOURNAL OF LUMINESCENCE | 2014年 / 154卷
基金：
新加坡国家研究基金会;
关键词：
Photoluminescence; Cr-implantation; P-type InCrP:Zn; SEMICONDUCTORS; INP; GAAS; MN;
D O I：
10.1016/j.jlumin.2014.06.011
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：593 / 596
页数：4
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