Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

被引：9

作者：

Yang, Q ^{[1
]}

Scott, D ^{[1
]}

Chung, T ^{[1
]}

Stillman, GE ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期

关键词：

HBT; InGaP/GaAs; carbon doping; high gain;

D O I：

10.1007/s11664-000-0098-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of emitter cap growth conditions on the common-emitter current gain of InGaP/GaAs HBTs, grown by LP-MOCVD, has been studied. This work shows that the material quality of a carbon-doped base is highly dependent on the emitter cap growth. The emitter cap growth effectively serves as a source of thermal stress. This stress on the base during the emitter and cap growth causes the formation of carbon-related defects in the base that increase the base recombination and reduces the current gain. Atomic force microscopy is used to identify these carbon-related defects. Gain improvements of about 40% have been achieved by optimizing the emitter cap growth conditions to reduce the thermal stress.

引用

页码：75 / 79

页数：5

共 49 条

[41] Contactless evaluation of the common-emitter current gain factor in GaAlAs/GaAs HBTs from the photovoltaic effect observed in contactless electroreflectance and photoreflectance
Pollak, FH
Gavrilenko, VI
Krystek, W
Freeouf, JL
Streit, DC
Wojtowicz, M
PROCEEDINGS OF THE ELECTROCHEMICAL SOCIETY SYMPOSIUM ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES, 1997, 97 (12): : 255 - 266
[42] Reliability investigation of heavily C-doped InGaP/GaAs HBTs operated under a very high current-density condition
Mochizuki, K
Oka, T
Ouchi, K
Tanoue, T
SOLID-STATE ELECTRONICS, 1999, 43 (08) : 1425 - 1428
[43] High current gain In0.5Ga0.5P/GaAs heterostructure-emitter-bipolar transistor utilizing GaAs spacers
Hsu, WC
Lin, YS
Wu, YH
Su, JS
Huang, JZ
Lin, W
PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI), 1997, 97 (01): : 216 - 219
[44] CARBON-DOPED GAINP/GAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN
YANG, YF
HSU, CC
YANG, ES
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1383 - 1386
[45] Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga 0.8As/GaAs high electron mobility transistor structures
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) : 51 - 56
[46] Compositionally graded C-doped In1-XGaXAs base in InP/InGaAs D-HBTs grown by MOCVD with low base sheet resistance and high current gain
Ohkubo, M
Osabe, J
Ikeda, N
Ninomiya, T
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 641 - 644
[47] HIGH-CURRENT GAIN INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MULTIWAFER GAS-SOURCE MOLECULAR-BEAM EPITAXY SYSTEM
ANDO, H
OKAMOTO, N
YAMAURA, S
TOMIOKA, T
TAKAHASHI, T
SHIGEMATSU, H
KAWANO, A
SASA, S
FUJII, T
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1281 - 1286
[48] LOW-TEMPERATURE CHARACTERIZATION OF HIGH-CURRENT-GAIN GRADED-EMITTER ALGAAS/GAAS NARROW-BASE HETEROJUNCTION BIPOLAR-TRANSISTOR
IKOSSIANASTASIOU, K
EZIS, A
EVANS, KR
STUTZ, CE
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (08) : 414 - 417
[49] HIGH-CURRENT-GAIN SMALL-OFFSET-VOLTAGE IN0.49GA0.51P/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
LU, SS
WU, CC
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (09) : 468 - 470

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