Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVD

被引：9

作者：

Yang, Q ^{[1
]}

Scott, D ^{[1
]}

Chung, T ^{[1
]}

Stillman, GE ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期

关键词：

HBT; InGaP/GaAs; carbon doping; high gain;

D O I：

10.1007/s11664-000-0098-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of emitter cap growth conditions on the common-emitter current gain of InGaP/GaAs HBTs, grown by LP-MOCVD, has been studied. This work shows that the material quality of a carbon-doped base is highly dependent on the emitter cap growth. The emitter cap growth effectively serves as a source of thermal stress. This stress on the base during the emitter and cap growth causes the formation of carbon-related defects in the base that increase the base recombination and reduces the current gain. Atomic force microscopy is used to identify these carbon-related defects. Gain improvements of about 40% have been achieved by optimizing the emitter cap growth conditions to reduce the thermal stress.

引用

页码：75 / 79

页数：5

共 49 条

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不详
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