Growth of InGaAs: N δ-doped superlattices for multi-junction solar cells

被引：0
|
作者：
Umeda, Shumpei [1 ]
Yagi, Shuhei [1 ]
Miyashita, Naoya [2 ]
Okada, Yoshitaka [2 ]
Yaguchi, Hiroyuki [1 ]
机构：
[1] Saitama Univ, Saitama 3388570, Japan
[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1588904, Japan
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
关键词：
dilute nitrides; delta-doping technique; molecular beam epitaxy; multi-junction solar cells;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
InGaAs:N delta-doped superlattices (SLs) with a band gap of 1 eV were fabricated by molecular beam epitaxy as a candidate for the subcell material of 4-junction lattice-matched tandem solar cells. The N delta-doping was carried out by suppling N source during the growth interruption and the SL structures were obtained by alternate formation of a N delta-doped layer and an In0.06Ga0.94As spacer layer. It was revealed that excess N supply induces interstitial N incorporation and surface roughness. By adjusting the growth conditions and SL structural parameters, coherent growth of SLs with the band gap of 1 eV was successfully achieved.
引用
收藏
页码：1861 / 1864
页数：4
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