Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells

被引：22

作者：

Shu, G. W. ^{[1
]}

Lin, J. Y. ^{[2
]}

Jian, H. T. ^{[1
]}

Shen, J. L. ^{[1
]}

Wang, S. C. ^{[1
]}

Chou, C. L. ^{[1
]}

Chou, W. C. ^{[2
]}

Wu, C. H. ^{[3
]}

Chiu, C. H. ^{[4
,5
]}

Kuo, H. C. ^{[4
,5
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[3] Inst Nucl Res, Lungtan 32500, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 01期

关键词：

D O I：

10.1364/OE.21.00A123

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America

引用

页码：A123 / A130

页数：8

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