Growth of InGaAs: N δ-doped superlattices for multi-junction solar cells

被引：0

作者：

Umeda, Shumpei ^{[1
]}

Yagi, Shuhei ^{[1
]}

Miyashita, Naoya ^{[2
]}

Okada, Yoshitaka ^{[2
]}

Yaguchi, Hiroyuki ^{[1
]}

机构：

[1] Saitama Univ, Saitama 3388570, Japan

[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1588904, Japan

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

dilute nitrides; delta-doping technique; molecular beam epitaxy; multi-junction solar cells;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

InGaAs:N delta-doped superlattices (SLs) with a band gap of 1 eV were fabricated by molecular beam epitaxy as a candidate for the subcell material of 4-junction lattice-matched tandem solar cells. The N delta-doping was carried out by suppling N source during the growth interruption and the SL structures were obtained by alternate formation of a N delta-doped layer and an In0.06Ga0.94As spacer layer. It was revealed that excess N supply induces interstitial N incorporation and surface roughness. By adjusting the growth conditions and SL structural parameters, coherent growth of SLs with the band gap of 1 eV was successfully achieved.

引用

页码：1861 / 1864

页数：4

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