Effects of reactor pressure on GaN-based light-emitting diodes grown on a-plane sapphire substrates

被引：3

作者：

Li, DS ^{[1
]}

Chen, H ^{[1
]}

Yu, HB ^{[1
]}

Jia, HQ ^{[1
]}

Huang, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Acad Sinica, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 267卷 / 3-4期

关键词：

metalorganic chemical vapor deposition; nitrides;

D O I：

10.1016/j.jcrysgro.2004.04.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN and light-emitting diodes (LEDs) with InGaN/GaN multiple quantum wells (MQWs) were grown on a-plane sapphires under different reactor pressures by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) and atomic force microscopy (AFM) measures were performed to characterize the epitaxial films. Reverse bias current-voltage (I-V) characteristics and electroluminescence (EL) intensities of LEDs were measured. GaN film grown under higher reactor pressure showed better quality, and LED on it showed improved performance. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：395 / 399

页数：5

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