Independent-Double-Gate FinFET SRAM Technology

被引：0
|
作者：
Endo, K. [1 ]
O'uchi, S. [1 ]
Matsukawa, T. [1 ]
Liu, Y. [1 ]
Masahara, M. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Ibaraki 3058568, Japan
来源：
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期
关键词：
MATCHING PROPERTIES; DEVICES;
D O I：
10.1149/05004.0193ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Double-gate (DG) device technology has been proposed and investigated for many years. However, there are many issues due to the aggressively scaled feature size. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper present the variability issues in the scaled FinFET. Also, we focus on the Vth controllable independent DG technology to enhance circuit performance.
引用
收藏
页码：193 / 199
页数：7
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