Independent-Double-Gate FinFET SRAM Technology

被引：0
|
作者：
Endo, K. [1 ]
O'uchi, S. [1 ]
Matsukawa, T. [1 ]
Liu, Y. [1 ]
Masahara, M. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Ibaraki 3058568, Japan
来源：
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期
关键词：
MATCHING PROPERTIES; DEVICES;
D O I：
10.1149/05004.0193ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Double-gate (DG) device technology has been proposed and investigated for many years. However, there are many issues due to the aggressively scaled feature size. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper present the variability issues in the scaled FinFET. Also, we focus on the Vth controllable independent DG technology to enhance circuit performance.
引用
收藏
页码：193 / 199
页数：7
相关论文
共 50 条
  • [21] CMOS-Based Biosensors with an Independent Double-Gate FinFET
    Ahn, Jae-Hyuk
    Kim, Jee-Yeon
    Jung, Cheulhee
    Moon, Dong-Il
    Choi, Sung-Jin
    Kim, Chang-Hoon
    Lee, Kyung-Bok
    Park, Hyun Gyu
    Choi, Yang-Kyu
    [J]. 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [22] Independent-gate and tied-gate FinFET SRAM circuits: Design guidelines for reduced area and enhanced stability
    Tawfik, Sherif A.
    Liu, Zhiyu
    Kursun, Volkan
    [J]. 2007 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2007, : 370 - +
  • [23] Robust Double Gate FinFET Based Sense Amplifier Design Using Independent Gate Control
    Rathod, S. S.
    Saxena, A. K.
    Dasgupta, S.
    [J]. JOURNAL OF LOW POWER ELECTRONICS, 2010, 6 (04) : 533 - 544
  • [24] Leveraging Independent Double-Gate FinFET Devices for Machine Learning Classification
    Kenarangi, Farid
    Partin-Vaisband, Inna
    [J]. 2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
  • [25] Leveraging Independent Double-Gate FinFET Devices for Machine Learning Classification
    Kenarangi, Farid
    Partin-Vaisband, Inna
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 66 (11) : 4356 - 4367
  • [26] Ultra-efficient fully programmable membership function generator based on independent double-gate FinFET technology
    Jooq, Mohammad Khaleqi Qaleh
    Behbahani, Fereshteh
    Moaiyeri, Mohammad Hossein
    [J]. INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2023, 51 (10) : 4485 - 4502
  • [27] Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells
    Rao, Damodhar
    Y.v, Narayana
    V.v.k.d.v, Prasad
    [J]. SUSTAINABLE COMPUTING-INFORMATICS & SYSTEMS, 2022, 35
  • [28] Tri-Mode Independent Gate FinFET-Based SRAM With Pass-Gate Feedback: Technology-Circuit Co-Design for Enhanced Cell Stability
    Gupta, Sumeet Kumar
    Kulkarni, Jaydeep P.
    Roy, Kaushik
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3696 - 3704
  • [29] Independent gate skewed logic in double-gate SOI technology
    Cakici, T
    Mahmoodi, H
    Mukhopadhyay, S
    Roy, K
    [J]. 2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2005, : 83 - 84
  • [30] Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era
    Choi, YK
    King, TJ
    Hu, CM
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1595 - 1601
12345