Two new temperature compensated current sources

被引：7

作者：

Fabre, A ^{[1
]}

Alami, M ^{[1
]}

Alaoui, B ^{[1
]}

Bouhdada, A ^{[1
]}

机构：

[1] FAC SCI AINCHOK,LAB PHYS MAT & MICROELECT,CASABLANCA,MOROCCO

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 1997年 / 44卷 / 11期

关键词：

bipolar transistors; current mirrors; current sources; low voltage; temperature compensation;

D O I：

10.1109/81.641770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two new temperature compensated current sources implemented from bipolar transistors have been inspected. They are both deduced from the schema of the cascode current mirror and necessitate a total of six or seven transistors. Their performance have been compared to an earlier introduced current source with four transistors, Simulation and experimental results are reported, They indicate that for 5 V supply the new current sources are both less temperature sensitive than the preceding one over the range -55 degrees C to +125 degrees C. One of them (circuit C) was also found particularly suited to design current sources with a low supply voltage approaching 2 V-BE.

引用

页码：1071 / 1074

页数：4

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