A new consideration of correlation between external noise sources in HEMT two-temperature model

In this paper we have considered correlation between equivalent gate and drain noise sources in two-temperature model to demonstrate a better compatibility between measured noise parameters (y(opt), R-n p F-min) and the results from simulation. The originality of the contribution lies in considering correlation between external input and output equivalent noise temperatures (T-in and T-out) for transistor. In this case Danneville's model has been used with two additional constants (real and imaginary parts of correlation) which has a better agreement with measurements. At the end of this paper, a two stage MMIC compatible HEMT low noise amplifier at ka-band, which could be used for local multipoint distribution system (LMDS) and fixed satellite service (FSS), has been designed and the effect of noise sources' correlation has been considered on its noise figure.