Realized high power factor and thermoelectric performance in Cu3SbSe4

被引：26

作者：

Li, J. M. ^{[1
,2
]}

Li, D. ^{[1
]}

Song, C. J. ^{[1
]}

Wang, L. ^{[1
]}

Xin, H. X. ^{[1
]}

Zhang, J. ^{[1
]}

Qin, X. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China

[2] Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China

来源：

INTERMETALLICS | 2019年 / 109卷

关键词：

Cu3SbSe4; Thermoelectric; Nanocomposite; Doping; Thermal conductivity; Seebeck coefficient; IMPROVEMENT; COMPOUND;

D O I：

10.1016/j.intermet.2019.03.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the realization of high thermoelectric performance in Cu3SbSe4-based materials through Sn-doping and inclusion of Cu3Sb0.94Sn0.06Se2.5S1.5 nanostructure. This significant enhancement in thermoelectric performance is attributed to simultaneous modulation of the electrical and thermal transport. Sn doping can reduce electrical resistivity, maintaining its high power factor. Cu3Sb0.94Sn0.06Se2.5S1.5 nanoparticles dispersed in the matrix can strengthen interface scattering at the phase boundaries, which can effectively scatter the heat-carrying phonons and thus yielding low lattice thermal conductivity. As a result, the figure of merit reaches similar to 0.87 at 673 K for Cu3Sb0.96Sn0.04Se4-3% Cu3Sb0.94Sn0.06Se2.5S1.5.

引用

页码：68 / 73

页数：6

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