Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes

被引：5
|
作者：
Horsfall, AB [1 ]
Vassilevski, KV
Johnson, CM
Wright, NG
O'Neill, AG
Gwilliam, RM
机构：
[1] Univ Newcastle Upon Tyne, Dept Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Ioffe Inst, RU-194021 St Petersburg, Russia
[3] Univ Surrey, Surrey Ion Beam Ctr, Guildford GU2 5XH, Surrey, England
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
breakdown; guard rings; implantation; Schottky diodes;
D O I：
10.4028/www.scientific.net/MSF.389-393.1149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of geometry of boron implanted guard rings on the characteristics of Schottky diodes on 4H-SiC has been investigated. Results suggest, that whilst the breakdown voltage can be increased, the creation of damage from the implantation process and the additional processing requirements serve to increase the leakage current through the device to unacceptable levels. The leakage current through the terminated diodes is found to be proportional to the diode contact area. At high temperatures the leakage current density of the terminated diodes is equal to unterminated devices suggesting a common mechanism.
引用
收藏
页码：1149 / 1152
页数：4
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