Boron ultra low energy SIMS depth profiling improved by rotating stage

被引：16
|
作者：
Bersani, M. [1 ]
Giubertoni, D. [1 ]
Iacob, E. [1 ]
Barozzi, M. [1 ]
Pederzoli, S. [1 ]
Vanzetti, L. [1 ]
Anderle, M. [1 ]
机构：
[1] Ist Ric Sci & Tecnol, ITC, Ctr Ric Sci & Tecnol, I-38050 Trento, Italy
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 19期
关键词：
SIMS; O-2(+) analysis; roughness; ripples; ultra shallow junctions;
D O I：
10.1016/j.apsusc.2006.02.282
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Optimization of oblique incidence ultra low energy O-2(+) SIMS analysis of ultra shallow boron distributions has been investigated varying the atmosphere in the analysis chamber (ultra high vacuum or oxygen flooding) and evaluating the effect of a rotating stage allowing a 20 rpm rotation during the analysis. The impact of the different analytical approaches to the ripple formation on the crater bottom has been investigated on a boron delta doped silicon sample by AFM analysis. The combined use of a 0.5 keV O-2(+) beam at 68 degrees of incidence with oxygen flooding and stage rotation of 20 rpm gave a decay length of 2.0 nm/decade at 60 nm depth without any appreciable detection of variation of sputtering rate. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：7315 / 7317
页数：3
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