2.6 μm/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy

被引：0

作者：

Sugihara, D ^{[1
]}

Kikuchi, A ^{[1
]}

Kusakabe, K ^{[1
]}

Nakamura, S ^{[1
]}

Toyoura, Y ^{[1
]}

Yamada, T ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<323::AID-PSSA323>3.0.CO;2-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality GaN films were grown by molecular beam epitaxy (MBE) using elemental Ga and rf-plasma nitrogen as source with 1.2 mu m/h growth rate. GaN films were grown on the migration enhanced epitaxy (MEE)-GaN buffers deposited on (0001) sapphire substrates. The room temperature (RT) mobility was 372 cm(2)/Vs at 1.2 x 10(17) cm(-3). Furthermore, extreme high-speed GaN growth of 2.6 mu m/h was also demonstrated by increase of radical nitrogen supply at the substrates. The electron density of Si-doped GaN films was controlled in the range of 5.3 x 10(15) to 4.9 x 10(20) cm(-3) and the room temperature mobility was 252 cm(2)/Vs at 3.4 x 10(17) cm(-3). The narrowest full width at half maximum (FWHM) of photoluminescence at 15 K was 10.5 meV.

引用

页码：323 / 328

页数：6

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