High-quality GaN on AIN multiple intermediate layer with migration enhanced epitaxy by RF-molecular beam epitaxy

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机构：
[1] Sugihara, Daisuke
[2] Kikuchi, Akihiko
[3] Kusakabe, Kazuhide
[4] Nakamura, Shinichi
[5] Toyoura, Yousuke
[6] Yamada, Takayuki
[7] Kishino, Katsumi
来源：
Sugihara, Daisuke | 2000年 / JJAP, Tokyo卷 / 39期
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D O I：
10.1143/jjap.39.l197
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