A 9-31-GHz subharmonic passive mixer in 90-nm CMOS technology

被引:48
|
作者
Bao, Mingquan [1 ]
Jacobsson, Harald
Aspemyr, Lars
Carchon, Geert
Sun, Xiao
机构
[1] Ericsson AB, Ericsoon Res, Microwave & High Speed Elect Res Ctr, SE-43184 Molndal, Sweden
[2] IMEC, Microwave & RF Syst Package Team, B-3001 Louvain, Belgium
关键词
90-nm CMOS; MMIC; passive mixer; subharmonic mixer; wideband;
D O I
10.1109/JSSC.2006.881551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A subliarmonic down-conversion passive mixer is designed and fabricated in a 90-nm CMOS technology. It utilizes a single active device and operates in the LO source-pumped mode, i.e., the LO signal is applied to the source and the RF signal to the gate. When driven by an LO signal whose frequency is only half of the fundamental mixer, the mixer exhibits a conversion loss as low as 8-11 dB over a wide RF frequency range of 9-31 GHz. This performance is superior to the mixer operating in the gate-pumped mode where the mixer shows a conversion loss of 12-15 dB over an RF frequency range of 6.5-20 GHz. Moreover, this mixer can also operate with an LO signal whose frequency is only 1/3 of the fundamental one, and achieves a conversion loss of 12-15 dB within an RF frequency range of 12-33 GHz. The IF signal is always extracted from the drain via a low-pass filter which supports an IF frequency range from DC to 2 GHz. These results, for the first time, demonstrate the feasibility of implementation of high-frequency wideband subliarmonic passive mixers in a low-cost CMOS technology.
引用
收藏
页码:2257 / 2264
页数:8
相关论文
共 50 条
  • [1] An Ultra-Broadband Subharmonic Mixer With Distributed Amplifier Using 90-nm CMOS Technology
    Hung, Shih-Han
    Cheng, Kai-Wen
    Wang, Yeong-Her
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (10) : 3650 - 3657
  • [2] A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology
    Fa-en Liu
    Zhi-gong Wang
    Zhi-qun Li
    Qin Li
    Lu Tang
    Ge-liang Yang
    [J]. Journal of Zhejiang University SCIENCE C, 2014, 15 : 1183 - 1189
  • [3] Fully integrated 60-GHz single-ended resistive mixer in 90-nm CMOS technology
    Motlagh, BM
    Gunnarsson, SE
    Ferndahl, M
    Zirath, H
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (01) : 25 - 27
  • [4] Analysis of a New 33-58-GHz Doubly Balanced Drain Mixer in 90-nm CMOS Technology
    Yang, Hong-Yuan
    Tsai, Jeng-Han
    Huang, Tian-Wei
    Wang, Huei
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (04) : 1057 - 1068
  • [5] A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology
    Tsai, Jeng-Han
    Wu, Pei-Si
    Lin, Chin-Shen
    Huang, Tian-Wei
    Chern, John G. J.
    Huang, Wen-Chu
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (04) : 247 - 249
  • [6] A 31-45.5 GHz injection-locked frequency divider in 90-nm CMOS technology
    Liu, Fa-en
    Wang, Zhi-gong
    Li, Zhi-qun
    Li, Qin
    Tang, Lu
    Yang, Ge-liang
    [J]. JOURNAL OF ZHEJIANG UNIVERSITY-SCIENCE C-COMPUTERS & ELECTRONICS, 2014, 15 (12): : 1183 - 1189
  • [7] A 24-GHz High Linearity Down-conversion Mixer in 90-nm CMOS
    Chen, Feifei
    Wang, Yunshan
    Lin, Jung-Lin
    Tsai, Zuo-Min
    Wang, Huei
    [J]. 2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2018, : 73 - 75
  • [8] A 28-GHz Bidirectional Active Gilbert-Cell Mixer in 90-nm CMOS
    Chang, Yu-Teng
    Lin, Kun-You
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (05) : 473 - 476
  • [9] A 40-GHz quadrature LC VCO in 90-nm CMOS technology
    Usama, Muhammad
    Kwasniewski, Tad A.
    [J]. 2007 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3, 2007, : 1661 - 1663
  • [10] A 131 GHz push-push VCO in 90-nm CMOS technology
    Huang, PC
    Liu, RC
    Chang, HY
    Lin, CS
    Lei, MF
    Wang, H
    Su, CY
    Chang, CL
    [J]. 2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2005, : 613 - 616