A 9-31-GHz subharmonic passive mixer in 90-nm CMOS technology

被引:48
|
作者
Bao, Mingquan [1 ]
Jacobsson, Harald
Aspemyr, Lars
Carchon, Geert
Sun, Xiao
机构
[1] Ericsson AB, Ericsoon Res, Microwave & High Speed Elect Res Ctr, SE-43184 Molndal, Sweden
[2] IMEC, Microwave & RF Syst Package Team, B-3001 Louvain, Belgium
关键词
90-nm CMOS; MMIC; passive mixer; subharmonic mixer; wideband;
D O I
10.1109/JSSC.2006.881551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A subliarmonic down-conversion passive mixer is designed and fabricated in a 90-nm CMOS technology. It utilizes a single active device and operates in the LO source-pumped mode, i.e., the LO signal is applied to the source and the RF signal to the gate. When driven by an LO signal whose frequency is only half of the fundamental mixer, the mixer exhibits a conversion loss as low as 8-11 dB over a wide RF frequency range of 9-31 GHz. This performance is superior to the mixer operating in the gate-pumped mode where the mixer shows a conversion loss of 12-15 dB over an RF frequency range of 6.5-20 GHz. Moreover, this mixer can also operate with an LO signal whose frequency is only 1/3 of the fundamental one, and achieves a conversion loss of 12-15 dB within an RF frequency range of 12-33 GHz. The IF signal is always extracted from the drain via a low-pass filter which supports an IF frequency range from DC to 2 GHz. These results, for the first time, demonstrate the feasibility of implementation of high-frequency wideband subliarmonic passive mixers in a low-cost CMOS technology.
引用
收藏
页码:2257 / 2264
页数:8
相关论文
共 50 条
  • [21] RF Module Design of Passive UHF RFID Tag Implemented in CMOS 90-nm Technology
    Leung, Ka Nang
    Choy, Chiu Sing
    Pun, Kong-Pang
    Leung, Lincoln Lai Kan
    Guo, Jianping
    Ng, Yuen Sum
    Chan, Chi Fat
    Shi, Weiwei
    Hong, Yang
    Ho, Marco
    Mak, Ki-Leung
    Ai, Yanqing
    [J]. JOURNAL OF LOW POWER ELECTRONICS, 2010, 6 (01) : 141 - 149
  • [22] A 2.4-GHz High Conversion Gain Passive Mixer Using Q-Boosted π-Type LCL Matching Networks in 90-nm CMOS
    Oh, Hyun-Myung
    Kim, Jae-Sun
    Lim, Jeong-Taek
    Kim, Choul-Young
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2017, 27 (08) : 736 - 738
  • [23] A 90-nm wideband merged CMOS LNA and mixer exploiting noise cancellation
    Amer, Ahmed
    Hegazi, Emad
    Ragaie, Hani F.
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (02) : 323 - 328
  • [24] 60-GHz Integrated Transmitter Development in 90-nm CMOS
    Dawn, Debasis
    Sen, Padmanava
    Sarkar, Saikat
    Perumana, Bevin
    Pinel, Stephane
    Laskar, Joy
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (10) : 2354 - 2367
  • [25] A broadband 44-GHz frequency divider in 90-nm CMOS
    Wong, KLJ
    Rylyakov, A
    Yang, CKK
    [J]. 2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 196 - 199
  • [26] An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology
    Zhou, Jie
    Luo, Xun
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (10) : 1146 - 1149
  • [27] 65 nm SOI CMOS 60 GHz Passive Mixer for Six-Port Technology
    Haddadi, Kamel
    Loyez, Christophe
    [J]. 2016 IEEE TOPICAL CONFERENCE ON WIRELESS SENSORS AND SENSOR NETWORKS (WISNET), 2016, : 52 - 55
  • [28] Modeling and characterization of noise in 90-nm RF CMOS technology
    Scholten, AJ
    Tiemeijer, LF
    Zegers-van Duijnhoven, ATA
    Havens, RJ
    de Kort, R
    van Langevelde, R
    Klaassen, DBM
    Jeamsaksiri, W
    Velghe, RMDA
    [J]. NOISE AND FLUCTUATIONS, 2005, 780 : 735 - 740
  • [29] 26.5-30-GHz resistive mixer in 90-nm VLSI SOICMOS technology with high linearity for WLAN
    Ellinger, F
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (08) : 2559 - 2565
  • [30] An E-band Double-Balanced Subharmonic Mixer With High Conversion Gain and Low Power in 90-nm CMOS Process
    Wu, Yi-Ching
    Wang, Huei
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2018, 28 (01) : 70 - 72