Spectrum imaging of high-k dielectric stacks

被引：0
|
作者：
MacKenzie, M [1 ]
Craven, AJ
McComb, DW
Hamilton, DA
McFadzean, S
机构：
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
来源：
ELECTRON MICROSCOPY AND ANALYSIS 2003 | 2004年 / 179期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electron energy loss spectroscopy combined with spectrum imaging gives a powerful technique that can be used to examine the structural, chemical and electronic properties of materials on a sub-nanometre scale. We have used this technique to examine high-k dielectric devices. ELNES from experimental standards have been utilised in the interpretation of the data.
引用
收藏
页码：299 / 302
页数：4
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