SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

被引：13
|
作者：
Boieriu, P
Sporken, R
Adriaens, A
Xin, Y
Browning, ND
Sivananthan, S
机构：
[1] Univ Instelling Antwerp, Dept Chem, B-2610 Wilrijk, Belgium
[2] Univ Illinois, Dept Phys MC 273, Microphys Lab, Chicago, IL 60607 USA
[3] Fac Univ Notre Dame Paix, Lab Interdisciplinaire Spect Elect, B-5000 Namur, Belgium
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷
关键词：
solar cells; CdS/CdTe; molecular beam epitaxy; SIMS;
D O I：
10.1016/S0168-583X(99)00926-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this study we have grown epitaxial layers of wurtzite-CdS on CdTe((111) over bar)B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5 x 10(17) to 1.4 x 10(21) cm(-3) and agree well with the variation expected from the In flux. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：975 / 979
页数：5
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