XPS and AES investigation of GaN films grown by MBE

被引：0
|
作者：
Yuan, Jin-She
Chen, Guang-De
Qi, Ming
Li, Ai-Zhen
Xu, Zhuo
机构：
[1] Department of Applied Physics, Xi'An Jiaotong University, Xi'an 710049, China
[2] Department of Applied Physics, Xi'An University of Technology, Xi'an 710048, China
[3] Shanghai Metallurgy Institute, Chinese Academy of Sciences, Shanghai 200050, China
[4] Institute of Electronic Material, Xi'an Jiaotong University, Xi'an 710049, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2001年 / 50卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2432 / 2433
相关论文
共 50 条
  • [1] XPS and AES investigation of GaN films grown by MBE
    Yuan, JS
    Chen, GD
    Qi, M
    Li, AZ
    Xu, Z
    ACTA PHYSICA SINICA, 2001, 50 (12) : 2429 - 2433
  • [2] Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films
    Moore, J. C.
    Reshchikov, M. A.
    Ortiz, J. E.
    Xie, J.
    Morkoc, H.
    Baski, A. A.
    GALLIUM NITRIDE MATERIALS AND DEVICES III, 2008, 6894
  • [3] MBE grown high quality GaN films and devices
    Kim, W
    Aktas, O
    Salvador, A
    Bothkarev, A
    Sverdlov, B
    Mohammad, SN
    Morkoc, H
    SOLID-STATE ELECTRONICS, 1997, 41 (02) : 169 - 175
  • [4] In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates
    Konishi, M
    Anantathanasarn, S
    Hashizume, T
    Hasegawa, H
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 837 - 842
  • [5] AN XPS STUDY OF THE OXIDATION OF ALAS THIN-FILMS GROWN BY MBE
    TAYLOR, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 751 - 755
  • [6] Defect microstructure of thin wurtzite GaN films grown by MBE
    Sverdlov, BN
    Botchkarev, A
    Martin, GA
    Salvador, A
    Morkoc, H
    Tsen, SCY
    Smith, DJ
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 175 - 180
  • [7] QUANTITATIVE AES AND XPS INVESTIGATION OF MAGNETRON SPUTTERED TINX FILMS
    BENDER, H
    PORTILLO, J
    VANDERVORST, W
    SURFACE AND INTERFACE ANALYSIS, 1989, 14 (6-7) : 337 - 346
  • [8] Current conduction mechanisms of heteroepitaxial and homoepitaxial GaN films grown by MBE
    Dogan, S
    Spradlin, J
    Molnar, R
    Baski, AA
    Morkoç, H
    2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS, 2004, : 8 - 14
  • [9] Low-temperature luminescence study of GaN films grown by MBE
    Andrianov, AV
    Lacklison, DE
    Orton, JW
    Dewsnip, DJ
    Hooper, SE
    Foxon, CT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (03) : 366 - 371
  • [10] THE INVESTIGATION OF PASSIVE FILMS ON IRON CHROMIUM-ALLOYS BY AES AND XPS
    MISCHLER, S
    MATHIEU, HJ
    LANDOLT, D
    SURFACE AND INTERFACE ANALYSIS, 1988, 12 (1-12) : 429 - 429
12345